Invention Grant
- Patent Title: Photoresist removal
- Patent Title (中): 光刻胶去除
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Application No.: US14224656Application Date: 2014-03-25
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Publication No.: US09256134B2Publication Date: 2016-02-09
- Inventor: David W. Minsek , Melissa K. Rath , David D. Bernhard , Thomas H. Baum
- Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
- Applicant Address: US CT Danbury
- Assignee: Advanced Technology Materials, Inc.
- Current Assignee: Advanced Technology Materials, Inc.
- Current Assignee Address: US CT Danbury
- Agency: Moore & Van Allen, PLLC
- Agent Tristan A. Fuierer; Rosa Yaghmour
- Main IPC: B08B3/04
- IPC: B08B3/04 ; G03F7/42 ; C11D7/06 ; C11D7/32 ; C11D7/50 ; C11D11/00 ; H01L21/311 ; C11D3/04 ; C11D3/30 ; C11D3/39 ; C11D3/395 ; C11D3/43 ; H01L21/02
Abstract:
Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.
Public/Granted literature
- US20140213498A1 PHOTORESIST REMOVAL Public/Granted day:2014-07-31
Information query
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