Invention Grant
- Patent Title: Semiconductor device having identification information generating function and identification information generation method for semiconductor device
- Patent Title (中): 具有识别信息生成功能的半导体装置和半导体装置的识别信息生成方法
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Application No.: US13903535Application Date: 2013-05-28
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Publication No.: US09256261B2Publication Date: 2016-02-09
- Inventor: Masanori Isoda , Hidehiro Fujiwara , Koji Nii
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-122080 20120529
- Main IPC: G06F1/26
- IPC: G06F1/26 ; G06F3/00 ; G06F12/00 ; G06F11/00 ; G06F21/44 ; G11C5/14 ; G11C8/20 ; G11C11/417 ; G06F11/22 ; G06F21/71 ; G06F12/14 ; G06F21/78
Abstract:
A semiconductor device includes an identification information generation circuit having a power supply control circuit whose output voltage is controlled by a control signal, and a memory array having a first cell power line and a second cell power line. The power supply control circuit outputs a first supply voltage and a second supply voltage to a first cell power line and a second power line, respectively, when the control signal is in a first state, and outputs an intermediate voltage to the first cell power line and the second cell power line when the control signal is in a second state.
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