Invention Grant
- Patent Title: Memory module architecture
- Patent Title (中): 内存模块架构
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Application No.: US13993506Application Date: 2011-12-28
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Publication No.: US09256493B2Publication Date: 2016-02-09
- Inventor: Murugasamy K. Nachimuthu , Mohan J. Kumar , Debaleena Das , Dimitrios Ziakas
- Applicant: Murugasamy K. Nachimuthu , Mohan J. Kumar , Debaleena Das , Dimitrios Ziakas
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- International Application: PCT/US2011/067496 WO 20111228
- International Announcement: WO2013/100939 WO 20130704
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C5/04 ; G11C13/00

Abstract:
In accordance with some embodiments, memory modules containing phase change memory elements may be organized so that each memory integrated circuit includes both data and error correcting code. As a result of including the error correcting code in each integrated circuit, extra accesses of the memory module to extract the error correcting code can be avoided, improving the performance of the overall memory module in some embodiments.
Public/Granted literature
- US20140195876A1 Memory Module Architecture Public/Granted day:2014-07-10
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