Invention Grant
- Patent Title: Method of detecting a scattering bar by simulation
- Patent Title (中): 通过模拟检测散射棒的方法
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Application No.: US14491732Application Date: 2014-09-19
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Publication No.: US09256703B1Publication Date: 2016-02-09
- Inventor: Wanjuan Zhang , Yibin Huang
- Applicant: Semiconductor Manufacturing International (Beijing) Corporation , Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Beijing CN Shanghai
- Assignee: Semiconductor Manufacturing International (Beijing) Corporation,Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Beijing) Corporation,Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Beijing CN Shanghai
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: G06F17/50
- IPC: G06F17/50
Abstract:
A method of testing a scattering bar by simulation includes preparing an OPC mask model including a main pattern and a scattering bar pattern, forming a scattering bar OPC model by adjusting an image plane of the OPC mask model located at a middle portion of a photoresist layer to a top portion of the photoresist layer, simulating an exposure of the scattering bar OPC model, simulating a profile of the exposed scattering bar OPC model, and testing the simulated profile.
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