Invention Grant
- Patent Title: Semiconductor device and method for driving semiconductor device
- Patent Title (中): 用于驱动半导体器件的半导体器件和方法
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Application No.: US13906830Application Date: 2013-05-31
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Publication No.: US09257071B2Publication Date: 2016-02-09
- Inventor: Hajime Kimura
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2012-126376 20120601
- Main IPC: G09G3/32
- IPC: G09G3/32
Abstract:
One electrode of SW1 is connected to a first wiring, and the other electrode of the SW1 is connected to one electrode of SW2, one electrode of second capacitor, and a gate electrode of a transistor. The other electrode of the SW2 is electrically connected to one electrode of SW3 and one electrode of first capacitor. The other electrode of the SW3 is connected to the other electrode of the second capacitor and one electrode of SW4. The other electrode of the SW4 is connected to a source electrode of the transistor and one electrode of SW5. The other electrode of the SW5 is connected to the other electrode of the first capacitor, an anode electrode of a load, and one electrode of SW6. The other electrode of the SW6 is connected to a fourth wiring. A drain electrode of the transistor is connected to a second wiring.
Public/Granted literature
- US20130321249A1 Semiconductor Device and Method for Driving Semiconductor Device Public/Granted day:2013-12-05
Information query
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