Invention Grant
US09257155B2 Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
有权
具有用于存储单元阵列的电压产生电路的集成电路及其操作和/或控制方法
- Patent Title: Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
- Patent Title (中): 具有用于存储单元阵列的电压产生电路的集成电路及其操作和/或控制方法
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Application No.: US14188298Application Date: 2014-02-24
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Publication No.: US09257155B2Publication Date: 2016-02-09
- Inventor: David E. Fisch , Philippe Bauser
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Wilmer Cutler Pickering Hale and Dorr LLP
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C5/14 ; G11C8/12 ; G11C11/404 ; G11C11/4076

Abstract:
A method of generating a voltage as well as an integrated circuit device (e.g., a logic device or a memory device) having a memory cell array which includes (i) a plurality of memory cells, wherein each memory cell array including (i) a plurality of memory cells, arranged in a matrix of rows and columns, and (ii) a plurality of bit lines, wherein each bit line includes a plurality of memory cells. The integrated circuit further includes voltage generation circuitry, coupled to a plurality of the bit lines, to (i) apply a first voltage to a first group of associated bit lines, and (ii) apply a second voltage to a second group of associated bit lines, and (iii) generate a third voltage by connecting the first group of associated bit lines and the second group of associated bit lines, and (iv) output the third voltage.
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