Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14328324Application Date: 2014-07-10
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Publication No.: US09257158B2Publication Date: 2016-02-09
- Inventor: Hong-Jung Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0140969 20111223
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/10 ; G11C29/00

Abstract:
A semiconductor device includes: a plurality of repair fuse circuits configured to each program a repair target address; and an enable signal generation circuit configured to generate at least one enable signal in response to a source signal and provide the enable signal to each of the repair fuse circuits in common. Since the semiconductor device may iteratively generate a rupture enable signal through a feedback scheme, the area occupied by a circuit, such as a shift register or a D flip-flop may be saved.
Public/Granted literature
- US20140321219A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-10-30
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