Invention Grant
- Patent Title: Semiconductor devices
- Patent Title (中): 半导体器件
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Application No.: US14251053Application Date: 2014-04-11
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Publication No.: US09257170B2Publication Date: 2016-02-09
- Inventor: Chang Hyun Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2013-0152723 20131210
- Main IPC: G11C11/406
- IPC: G11C11/406
Abstract:
The semiconductor device includes a pre-internal refresh signal generator and an internal refresh signal generator. The pre-internal refresh signal generator receives a first periodic signal during a refresh operation to generate a pre-internal refresh signal including pulses which are periodically created. The internal refresh signal generator receives a second periodic signal during the refresh operation to generate first and second internal refresh signals sequentially enabled by the pulses of the pre-internal refresh signal.
Public/Granted literature
- US20150162073A1 SEMICONDUCTOR DEVICES Public/Granted day:2015-06-11
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