Invention Grant
US09257181B2 Sense amplification circuits, output circuits, nonvolatile memory devices, memory systems, memory cards having the same, and data outputting methods thereof
有权
检测放大电路，输出电路，非易失性存储器件，存储器系统，具有该检测放大电路的存储器卡及其数据输出方法
- Patent Title: Sense amplification circuits, output circuits, nonvolatile memory devices, memory systems, memory cards having the same, and data outputting methods thereof
- Patent Title (中): 检测放大电路，输出电路，非易失性存储器件，存储器系统，具有该检测放大电路的存储器卡及其数据输出方法
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Application No.: US13427019Application Date: 2012-03-22
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Publication No.: US09257181B2Publication Date: 2016-02-09
- Inventor: Taesung Lee , Jaewoo Im
- Applicant: Taesung Lee , Jaewoo Im
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0042986 20110506
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C16/04 ; G11C16/26 ; G11C16/28
Abstract:
An output circuit of a nonvolatile memory device includes a sense amplification circuit configured to, during a sensing operation, generate output data based on a comparison between a first voltage on a data line and a reference voltage on a reference data line during a sensing operation, the first voltage corresponding to data read from at least one memory cell, and the sense amplification circuit being further configured to connect the reference data line with a ground terminal during the sensing operation.
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