A semiconductor storage device includes a plurality of memory cell transistors that are connected to each other in series, a plurality of word lines that are connected to the plurality of memory cell transistors, and a control circuit. The control circuit applies a first potential to a selected one of the plurality of word lines. The control circuit applies a second potential that is higher than the first potential to the word lines that are not selected at different timings before the first potential is applied to the selected word line.