Invention Grant
US09257186B2 Memory access techniques for a memory having a three-dimensional memory configuration
有权
具有三维存储器配置的存储器的存储器访问技术
- Patent Title: Memory access techniques for a memory having a three-dimensional memory configuration
- Patent Title (中): 具有三维存储器配置的存储器的存储器访问技术
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Application No.: US14272951Application Date: 2014-05-08
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Publication No.: US09257186B2Publication Date: 2016-02-09
- Inventor: Manuel Antonio D'Abreu , Xinde Hu
- Applicant: SANDISK TECHNOLOGIES INC.
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES INC.
- Current Assignee: SANDISK TECHNOLOGIES INC.
- Current Assignee Address: US TX Plano
- Agency: Toler Law Group, PC
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/10 ; G11C29/00

Abstract:
A data storage device includes a memory having a three-dimensional (3D) memory configuration. A method includes writing first data at a first physical page that is disposed within the memory at a first distance from a substrate of the memory. The first data is written at the first physical page using a first write technique. The method further includes writing second data at a second physical page that is disposed within the memory at a second distance from the substrate. The second distance is greater than the first distance. The second data is written at the second physical page using a second write technique that is different than the first write technique.
Public/Granted literature
- US20150325298A1 MEMORY ACCESS TECHNIQUES FOR A MEMORY HAVING A THREE-DIMENSIONAL MEMORY CONFIGURATION Public/Granted day:2015-11-12
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