Invention Grant
US09257186B2 Memory access techniques for a memory having a three-dimensional memory configuration 有权
具有三维存储器配置的存储器的存储器访问技术

Memory access techniques for a memory having a three-dimensional memory configuration
Abstract:
A data storage device includes a memory having a three-dimensional (3D) memory configuration. A method includes writing first data at a first physical page that is disposed within the memory at a first distance from a substrate of the memory. The first data is written at the first physical page using a first write technique. The method further includes writing second data at a second physical page that is disposed within the memory at a second distance from the substrate. The second distance is greater than the first distance. The second data is written at the second physical page using a second write technique that is different than the first write technique.
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