Invention Grant
- Patent Title: Nonvolatile memory and memory system
- Patent Title (中): 非易失性存储器和存储器系统
-
Application No.: US14479484Application Date: 2014-09-08
-
Publication No.: US09257188B2Publication Date: 2016-02-09
- Inventor: Norihiro Fujita , Jun Segawa
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaishia Toshiba
- Current Assignee: Kabushiki Kaishia Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; G11C16/34

Abstract:
According to one embodiment, in a nonvolatile memory, the determination unit determines whether a change process is executable or not. The change process is a process based on characteristics of the memory cell array when a first write process is performed. The change process changes at least one of a value of a write start voltage and an increase amount in a write voltage in a second write process. The second write process is a process where a write operation of writing data to upper pages of at least part of the plurality of nonvolatile memory cells and a verification operation are alternately repeated. The setting unit sets a maximum value for determining whether the second write process succeeds or fails to a first value when the change process is executable, and sets the maximum value to a second value when the change process is not executable.
Public/Granted literature
- US20150255158A1 NONVOLATILE MEMORY AND MEMORY SYSTEM Public/Granted day:2015-09-10
Information query