Invention Grant
US09257197B2 Apparatuses and/or methods for operating a memory cell as an anti-fuse
有权
用于将存储器单元操作为反熔丝的装置和/或方法
- Patent Title: Apparatuses and/or methods for operating a memory cell as an anti-fuse
- Patent Title (中): 用于将存储器单元操作为反熔丝的装置和/或方法
-
Application No.: US13543469Application Date: 2012-07-06
-
Publication No.: US09257197B2Publication Date: 2016-02-09
- Inventor: Andrea Redaelli
- Applicant: Andrea Redaelli
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C17/18 ; G11C13/00 ; G11C17/16
Abstract:
Embodiments disclosed herein relate to operating a memory cell as an anti-fuse, such as for use in phase change memory, for example.
Public/Granted literature
- US20140010005A1 APPARATUSES AND/OR METHODS FOR OPERATING A MEMORY CELL AS AN ANTI-FUSE Public/Granted day:2014-01-09
Information query
