Invention Grant
- Patent Title: Memory testing method and apparatus
- Patent Title (中): 内存测试方法和设备
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Application No.: US14585989Application Date: 2014-12-30
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Publication No.: US09257201B2Publication Date: 2016-02-09
- Inventor: Liang Qian
- Applicant: Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Applicant Address: CN Shanghai
- Assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Current Assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Current Assignee Address: CN Shanghai
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: CN201410078928 20140305
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/12

Abstract:
A method and an apparatus for testing a memory are provided, where the memory includes a plurality of sectors each of which includes a plurality of bytes, and the testing is performed to the memory byte by byte. The method includes: during the testing, once a first byte in a first sector fails the testing, stopping testing the rest bytes in the first sector which haven't been tested, and skipping the testing to a second byte in a second sector. Accordingly, if one byte of the first sector fails the testing, the testing will be skipped to a second sector, and the remained bytes of the first sector will not be tested any more, and other testing items will not be implemented to the first sector within the whole testing flow. Therefore, redundant testing steps can be avoided and testing efficiency can be improved.
Public/Granted literature
- US20150255174A1 MEMORY TESTING METHOD AND APPARATUS Public/Granted day:2015-09-10
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