Invention Grant
- Patent Title: Semiconductor switch and power conversion apparatus
- Patent Title (中): 半导体开关和电力转换装置
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Application No.: US13685908Application Date: 2012-11-27
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Publication No.: US09257248B2Publication Date: 2016-02-09
- Inventor: Hiroshi Mochikawa , Atsuhiko Kuzumaki , Junichi Tsuda , Yushi Koyama
- Applicant: Hiroshi Mochikawa , Atsuhiko Kuzumaki , Junichi Tsuda , Yushi Koyama
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP2011-260321 20111129
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00 ; H01H47/00 ; G05F3/02 ; H03K17/00

Abstract:
According to one embodiment, a switch includes a first element with a first withstand voltage, a second element whose withstand voltage is lower than the first withstand voltage, a diode which is connected between a positive electrode of the first element and a positive electrode of the second element in such a manner that a direction from the positive electrode of the second element toward the positive electrode of the first element is a forward direction and whose withstand voltage is equal to the first withstand voltage, a negative electrode of the first element and a negative electrode of the second element being connected, and a circuit configured to apply a positive voltage to the positive terminal output a pulse lower than the first withstand voltage when the first element goes off.
Public/Granted literature
- US20130134958A1 SEMICONDUCTOR SWITCH AND POWER CONVERSION APPARATUS Public/Granted day:2013-05-30
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