Invention Grant
US09257265B2 Methods for reducing etch nonuniformity in the presence of a weak magnetic field in an inductively coupled plasma reactor
有权
在电感耦合等离子体反应器中存在弱磁场的情况下减少蚀刻不均匀的方法
- Patent Title: Methods for reducing etch nonuniformity in the presence of a weak magnetic field in an inductively coupled plasma reactor
- Patent Title (中): 在电感耦合等离子体反应器中存在弱磁场的情况下减少蚀刻不均匀的方法
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Application No.: US14206723Application Date: 2014-03-12
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Publication No.: US09257265B2Publication Date: 2016-02-09
- Inventor: Alvaro Garcia De Gorordo , Waheb Bishara , Samer Banna
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01J37/32
Abstract:
Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, a method is provided for processing a substrate in a process chamber having a plurality of electromagnets disposed about the process chamber to form a magnetic field within the process chamber at least at a substrate level. In some embodiments, the method includes determining a first direction of an external magnetic field present within the process chamber while providing no current to the plurality of electromagnets; providing a range of currents to the plurality of electromagnets to create a magnetic field within the process chamber having a second direction opposing the first direction; determining a desired magnitude in the second direction of the magnetic field over the range of currents; and processing a substrate in the process chamber using a plasma while statically providing the magnetic field at the desired magnitude.
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