Invention Grant
US09257270B2 Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
有权
从具有铜，金属硬掩模和低k电介质材料的衬底去除抗蚀剂，蚀刻残余物和氧化铜的方法和组合物
- Patent Title: Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
- Patent Title (中): 从具有铜，金属硬掩模和低k电介质材料的衬底去除抗蚀剂，蚀刻残余物和氧化铜的方法和组合物
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Application No.: US13765480Application Date: 2013-02-12
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Publication No.: US09257270B2Publication Date: 2016-02-09
- Inventor: Hua Cui
- Applicant: EKC Technology, Inc.
- Assignee: EKC TECHNOLOGY
- Current Assignee: EKC TECHNOLOGY
- Agent Simon L. Xu
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C09K13/00 ; C11D3/00 ; C11D3/39 ; C11D3/395 ; C11D7/32 ; C11D11/00
Abstract:
A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, at least one halide anion selected from Cl− or Br−, and, where the metal hard mask comprises only TiN or TiNxOy, optionally at least one hydroxide source.
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