Invention Grant
- Patent Title: Semiconductor device manufacturing method, substrate processing apparatus, and non-transitory recording medium
- Patent Title (中): 半导体装置的制造方法，基板处理装置以及非暂时记录介质
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Application No.: US13826599Application Date: 2013-03-14
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Publication No.: US09257271B2Publication Date: 2016-02-09
- Inventor: Tatsushi Ueda
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2012-68850 20120326
- Main IPC: H01L21/306
- IPC: H01L21/306 ; C23C16/56 ; H01L21/02
Abstract:
A method of manufacturing a semiconductor device includes: accommodating a substrate having an oxide film formed thereon into a processing chamber; supplying a process gas to the substrate; performing a preprocessing step in which the process gas is excited in a state that a pressure within the processing chamber is kept at a first pressure and an electric potential of the substrate is kept at a first electric potential; and performing a main processing step by which the process gas is excited in a state that the pressure within the processing chamber is kept at a second pressure and the electric potential of the substrate is kept at a second electric potential, wherein the first pressure is lower than the second pressure and the first electric potential is lower than the second electric potential.
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