Invention Grant
US09257273B2 Charged particle beam apparatus, thin film forming method, defect correction method and device forming method
有权
带电粒子束装置，薄膜形成方法，缺陷校正方法和器件形成方法
- Patent Title: Charged particle beam apparatus, thin film forming method, defect correction method and device forming method
- Patent Title (中): 带电粒子束装置，薄膜形成方法，缺陷校正方法和器件形成方法
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Application No.: US13876274Application Date: 2011-09-22
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Publication No.: US09257273B2Publication Date: 2016-02-09
- Inventor: Yoshihiro Koyama , Anto Yasaka , Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
- Applicant: Yoshihiro Koyama , Anto Yasaka , Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
- Applicant Address: JP JP JP
- Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION,JAPAN SCIENCE AND TECHNOLOGY AGENCY,JSR CORPORATION
- Current Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION,JAPAN SCIENCE AND TECHNOLOGY AGENCY,JSR CORPORATION
- Current Assignee Address: JP JP JP
- Agency: Adams & Wilks
- Priority: JP2010-217084 20100928
- International Application: PCT/JP2011/071578 WO 20110922
- International Announcement: WO2012/043363 WO 20120405
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/02 ; H01J37/317 ; C23C16/04 ; C23C16/24 ; C23C16/32 ; C23C16/40 ; C23C16/42 ; C23C16/48 ; C23C16/56 ; H01L21/66 ; H01L21/28 ; H01L29/66
Abstract:
A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.
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