Invention Grant
- Patent Title: Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
- Patent Title (中): 制造半导体器件，衬底处理设备和记录介质的方法
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Application No.: US14175463Application Date: 2014-02-07
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Publication No.: US09257275B2Publication Date: 2016-02-09
- Inventor: Atsushi Sano , Yoshiro Hirose
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2013-025382 20130213
- Main IPC: H01L21/469
- IPC: H01L21/469 ; H01L21/02 ; C23C16/30 ; C23C16/455 ; C23C16/56
Abstract:
A method of manufacturing a semiconductor device is disclosed. The method includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first layer containing boron and a halogen group by supplying a first precursor gas containing boron and the halogen group to the substrate; and forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying a second precursor gas containing the predetermined element and an amino group to the substrate and modifying the first layer.
Public/Granted literature
- US20140227886A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM Public/Granted day:2014-08-14
Information query
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