A method of fabricating a pattern comprising sequentially forming a pattern formation layer and a neutral layer on over a substrate having in a first regions and a second regions, forming guide patterns on first portions of over the neutral layer in the second regions, forming a first block copolymer layers on over second portions of the neutral layer in the first regions, phase-separating the tint block copolymer layers such that each of the first block copolymer layers includes to form first polymer blocks having a first phase and first polymer blocks having a second phase, removing the guide patterns to form openings that expose the first portions of the neutral layer in the second region, forming a second block copolymer layer on over the phase-separated first block copolymer layers and in the openings, phase-separating the second block copolymer layer into to form second polymer blocks having the first phase and second polymer blocks having the second phase removing the second polymer blocks having the second phase and the first polymer blocks having the second phase, and etching the neutral layer and the pattern formation layer using the first polymer blocks having the first phase and the second polymer blocks having the first phase as an etch masks.