Invention Grant
- Patent Title: Supply source and method for enriched selenium ion implantation
- Patent Title (中): 富硒硒离子注入的供应源和方法
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Application No.: US14267390Application Date: 2014-05-01
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Publication No.: US09257286B2Publication Date: 2016-02-09
- Inventor: Douglas C. Heiderman , Ashwini K. Sinha , Lloyd A. Brown
- Applicant: Douglas C. Heiderman , Ashwini K. Sinha , Lloyd A. Brown
- Applicant Address: US CT Danbury
- Assignee: Praxair Technology, Inc.
- Current Assignee: Praxair Technology, Inc.
- Current Assignee Address: US CT Danbury
- Agent Nilay S. Dalal
- Main IPC: H01L21/265
- IPC: H01L21/265 ; C23C14/00 ; F17C1/00 ; H01J37/317
Abstract:
A novel method for ion implanting isotopically enriched selenium containing source material is provided. The source material is selected and enriched in a specific mass isotope of selenium, whereby the enrichment is above natural abundance levels. The inventive method allows reduced gas consumption and reduced waste. The source material is preferably stored and delivered from a sub-atmospheric storage and delivery device to enhance safety and reliability during the selenium ion implantation process.
Public/Granted literature
- US20140329377A1 SUPPLY SOURCE AND METHOD FOR ENRICHED SELENIUM ION IMPLANTATION Public/Granted day:2014-11-06
Information query
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