Invention Grant
- Patent Title: Laser annealing device and method
- Patent Title (中): 激光退火装置及方法
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Application No.: US13935265Application Date: 2013-07-03
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Publication No.: US09257287B2Publication Date: 2016-02-09
- Inventor: BoXiu Cai
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN
- Agency: Innovation Counsel LLP
- Priority: CN201210533375 20121212
- Main IPC: H01L21/268
- IPC: H01L21/268 ; H01L21/20 ; H01L21/263 ; H01L21/26 ; H01L21/324 ; B23K26/04 ; B23K26/073 ; B23K26/08 ; G02B27/09
Abstract:
A laser annealing device for compensating wafer heat maps and its method are disclosed. A laser annealing device comprises a pump laser source array including of a plurality of pump laser sources for irradiating a tunable mask, each pump laser source emitting pump laser, an annealing laser source for emitting annealing laser and irradiating the tunable mask, and a tunable mask for transmitting at least part of the annealing laser after being irradiated by the pump laser.
Public/Granted literature
- US20140162381A1 LASER ANNEALING DEVICE AND METHOD Public/Granted day:2014-06-12
Information query
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