Invention Grant
US09257291B2 Method for forming a silicide layer at the bottom of a hole and device for implementing said method
有权
在孔的底部形成硅化物层的方法和用于实施所述方法的装置
- Patent Title: Method for forming a silicide layer at the bottom of a hole and device for implementing said method
- Patent Title (中): 在孔的底部形成硅化物层的方法和用于实施所述方法的装置
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Application No.: US13607345Application Date: 2012-09-07
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Publication No.: US09257291B2Publication Date: 2016-02-09
- Inventor: Magali Gregoire
- Applicant: Magali Gregoire
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Seed IP Law Group PLLC
- Priority: FR1157912 20110907
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/285 ; H01L21/768
Abstract:
A method for manufacturing a silicide layer in a hole formed across the entire thickness of a layer of a material deposited on a silicon layer, including: a first step of bombarding of the hole with particles to sputter the silicon at the bottom of the hole and deposit sputtered silicon on lateral walls of the hole; a second step of deposition in the hole of a layer of silicide precursor; a second step of bombarding of the hole with particles to sputter the silicon precursor at the bottom of the hole and deposit sputtered precursor on the internal walls of the hole; a second step of deposition in the hole of a layer of silicide precursor; and an anneal step to form a silicide layer in the hole.
Public/Granted literature
- US20130065392A1 METHOD FOR FORMING A SILICIDE LAYER AT THE BOTTOM OF A HOLE AND DEVICE FOR IMPLEMENTING SAID METHOD Public/Granted day:2013-03-14
Information query
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