Invention Grant
- Patent Title: Method of etching silicon oxide film
- Patent Title (中): 蚀刻氧化硅膜的方法
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Application No.: US14462658Application Date: 2014-08-19
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Publication No.: US09257301B2Publication Date: 2016-02-09
- Inventor: Masahiro Ogasawara , Masafumi Urakawa , Yoshinobu Hayakawa , Kazuhiro Kubota , Hikaru Watanabe
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2013-170218 20130820
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/311 ; H01L21/3213 ; H01J37/32
Abstract:
Provided is a method of etching a silicon oxide film. The method includes exposing a workpiece including the silicon oxide film and a mask formed on the silicon oxide film to plasma of a processing gas to etch the silicon oxide film. The mask includes a first film formed on the silicon oxide film and a second film formed on the first film, and the second film is constituted by a film having an etching rate lower than that of the first film with respect to active species in the plasma.
Public/Granted literature
- US20150056808A1 METHOD OF ETCHING SILICON OXIDE FILM Public/Granted day:2015-02-26
Information query
IPC分类:
