Invention Grant
- Patent Title: Selective formation of metallic films on metallic surfaces
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Application No.: US14613183Application Date: 2015-02-03
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Publication No.: US09257303B2Publication Date: 2016-02-09
- Inventor: Suvi P. Haukka , Antti Niskanen , Marko Tuominen
- Applicant: ASM International N.V.
- Applicant Address: NL
- Assignee: ASM INTERNATIONAL N.V.
- Current Assignee: ASM INTERNATIONAL N.V.
- Current Assignee Address: NL
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/3205 ; C23C16/02 ; C23C16/14 ; C23C16/455 ; H01L21/285 ; H01L21/768 ; H01L21/02

Abstract:
Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
Public/Granted literature
- US20150187600A1 SELECTIVE FORMATION OF METALLIC FILMS ON METALLIC SURFACES Public/Granted day:2015-07-02
Information query
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