Invention Grant
US09257306B2 Lead frame, method for manufacturing lead frame, semiconductor device, and method for manufacturing semiconductor device
有权
引线框架,引线框架的制造方法,半导体器件以及半导体器件的制造方法
- Patent Title: Lead frame, method for manufacturing lead frame, semiconductor device, and method for manufacturing semiconductor device
- Patent Title (中): 引线框架,引线框架的制造方法,半导体器件以及半导体器件的制造方法
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Application No.: US14254543Application Date: 2014-04-16
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Publication No.: US09257306B2Publication Date: 2016-02-09
- Inventor: Satoshi Shibasaki , Koji Tomita , Masaki Yazaki , Kazuyuki Miyano , Atsushi Kurahashi , Kazuhito Uchiumi , Masachika Masuda
- Applicant: DAI NIPPON PRINTING CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: DAI NIPPON PRINTING CO., LTD.
- Current Assignee: DAI NIPPON PRINTING CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2013-087695 20130418; JP2013-087713 20130418; JP2013-201321 20130927
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/48 ; H01L23/00 ; H01L21/56 ; H01L23/31

Abstract:
A lead frame includes a die pad and a plurality of lead portions each including an internal terminal and an external terminal. The external terminals of the plurality of lead portions are arranged in an alternately staggered form such that the respective external terminals of a pair of lead portions adjacent to each other are alternatively located on an inside or an outside. A lead portion has an inside region located on the inside of a first external terminal, an outside region located on the outside of the first external terminal, and an external terminal region having the first external terminal. The inside region and the outside region are each formed thin by means of half etching. A maximum thickness of the outside region is larger than a maximum thickness of the inside region.
Public/Granted literature
Information query
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