Invention Grant
- Patent Title: Singulation apparatus and method
- Patent Title (中): 分割装置和方法
-
Application No.: US13917318Application Date: 2013-06-13
-
Publication No.: US09257321B2Publication Date: 2016-02-09
- Inventor: Chun-Cheng Lin , Yu-Peng Tsai , Meng-Tse Chen , Ming-Da Cheng , Chung-Shi Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Agent Anthony King
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L21/78 ; H01L21/67

Abstract:
A singulation apparatus includes a carrier having a plurality of singulation sites and a scribe line between each of the plurality of singulation sites and an adjacent singulation site. The carrier has a top surface configured to receive a semiconductor substrate thereon. Each of the plurality of singulation sites includes a deformable portion and at least one vacuum hole. The at least one vacuum hole and the deformable portion is configured to form a seal around the at least one vacuum holes when a force is applied. The present disclosure further includes a method of manufacturing semiconductor devices, especially for a singulation process.
Public/Granted literature
- US20140370659A1 SINGULATION APPARATUS AND METHOD Public/Granted day:2014-12-18
Information query
IPC分类: