Invention Grant
- Patent Title: Semiconductor device and method for forming the same
- Patent Title (中): 半导体装置及其形成方法
-
Application No.: US13894605Application Date: 2013-05-15
-
Publication No.: US09257323B2Publication Date: 2016-02-09
- Inventor: Yu-Lien Huang , Tung Ying Lee , Pei-Yi Lin , Chun-Hsiang Fan , Sheng-Wen Yu , Neng-Kuo Chen , Ming-Huan Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/762
Abstract:
A semiconductor device includes a substrate and a gate structure formed over the substrate. The semiconductor device further includes an insulator feature formed in the substrate. The insulator feature includes an insulating layer and a capping layer over the insulating layer.
Public/Granted literature
- US20140252432A1 Semiconductor Device and Method for Forming the Same Public/Granted day:2014-09-11
Information query
IPC分类:
