Invention Grant
- Patent Title: TSV substrate structure and the stacked assembly thereof
- Patent Title (中): TSV基板结构及其堆叠组装
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Application No.: US14615922Application Date: 2015-02-06
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Publication No.: US09257338B2Publication Date: 2016-02-09
- Inventor: Chung-Chih Wang , Pei-Jer Tzeng , Cha-Hsin Lin , Tzu-Kun Ku
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsin-Chu
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: TW Hsin-Chu
- Agency: WPAT, PC
- Agent Justin King
- Priority: TW99141056A 20101126
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/768 ; H01L23/48 ; H01L23/538 ; H01L23/00 ; H01L21/321 ; H01L21/3213 ; H01L25/00

Abstract:
The disclosure provides a TSV substrate structure and the stacked assembly of a plurality of the substrate structures, the TSV substrate structure including: a substrate comprising a first surface, a corresponding second surface, and a TSV communicating the first surface with the second surface through the substrate; and a conductor unit completely filling the TSV, the conductor unit comprising a conductor body which has a first and a second ends corresponding to the first and second surfaces of the substrate, respectively.
Public/Granted literature
- US20150155204A1 TSV SUBSTRATE STRUCTURE AND THE STACKED ASSEMBLY THEREOF Public/Granted day:2015-06-04
Information query
IPC分类: