Invention Grant
US09257340B2 Wafer and method for forming the same 有权
晶圆及其形成方法

  • Patent Title: Wafer and method for forming the same
  • Patent Title (中): 晶圆及其形成方法
  • Application No.: US14273468
    Application Date: 2014-05-08
  • Publication No.: US09257340B2
    Publication Date: 2016-02-09
  • Inventor: Hee Bok KangYoung Wug Kim
  • Applicant: SK HYNIX INC.
  • Applicant Address: KR Icheon
  • Assignee: SK HYNIX INC.
  • Current Assignee: SK HYNIX INC.
  • Current Assignee Address: KR Icheon
  • Priority: KR10-2009-0115594 20091127
  • Main IPC: H01L21/78
  • IPC: H01L21/78
Wafer and method for forming the same
Abstract:
A wafer and a method for forming the same are disclosed. The wafer forming method can separate respective chips from others by performing a Deep Reactive Ion Etching (DRIE) process on a wafer including a plurality of chips. The wafer includes a plurality of chips configured to be arranged in row and column directions on the wafer, a scribe line configured to be formed among the plurality of chips so as to separate each chip, and an align key line configured to be formed in one side of the wafer so as to form an align key pattern.
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