Invention Grant
US09257346B2 Apparatus and methods for forming a modulation doped non-planar transistor
有权
用于形成调制掺杂非平面晶体管的装置和方法
- Patent Title: Apparatus and methods for forming a modulation doped non-planar transistor
- Patent Title (中): 用于形成调制掺杂非平面晶体管的装置和方法
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Application No.: US14104096Application Date: 2013-12-12
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Publication No.: US09257346B2Publication Date: 2016-02-09
- Inventor: Ravi Pillarisetty , Mantu Hudait , Marko Radosavljevic , Willy Rachmady , Gilbert Dewey , Jack Kavalieros
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Winkle, PLLC
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L21/8238 ; H01L29/66
Abstract:
Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed.
Public/Granted literature
- US20140099759A1 APPARATUS AND METHODS FOR FORMING A MODULATION DOPED NON-PLANAR TRANSISTOR Public/Granted day:2014-04-10
Information query
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