Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US14572655Application Date: 2014-12-16
-
Publication No.: US09257363B2Publication Date: 2016-02-09
- Inventor: Kenta Nakahara , Hiroshi Yoshida
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2014-045924 20140310
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/06 ; H01L23/427 ; H01L35/30 ; H01L33/64 ; H01L23/367 ; H01L23/373 ; H01L23/40
Abstract:
A base plate has a mounting surface on which a semiconductor element is mounted and a heat-radiation surface for radiating heat to a cooler. The cover has a portion that seals the semiconductor element on the mounting surface of the base plate. The cover has a projecting portion arranged outside the heat-radiation surface and projecting from a level of the heat-radiation surface in a thickness direction. The intermediate layer is arranged on the heat-radiation surface of the base plate, projects from the level of the projecting portion of the cover in a thickness direction, and is made of a thermoplastic material in a solid-phase state.
Public/Granted literature
- US20150255367A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-09-10
Information query
IPC分类:
