Invention Grant
- Patent Title: Semiconductor device having a base film and manufacturing method for same
- Patent Title (中): 具有基膜的半导体器件及其制造方法
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Application No.: US14172287Application Date: 2014-02-04
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Publication No.: US09257369B2Publication Date: 2016-02-09
- Inventor: Toshiro Mitsuhashi
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2013-023569 20130208
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/48 ; H01L21/768 ; H01L23/00
Abstract:
The present invention is directed to a semiconductor device including a semiconductor substrate, a through hole penetrating the semiconductor substrate, a base film covering the through hole, a conductive layer disposed on the base film, an insulating film formed on the side wall of the through hole, and a conductive material embedded in the through hole via the insulating film, in which the base film has a stepped portion formed by an opening pattern that selectively exposes the conductive layer therethrough into the through hole, and in which the conductive material is connected electrically to the conductive layer through the opening pattern.
Public/Granted literature
- US20140225266A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME Public/Granted day:2014-08-14
Information query
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