Invention Grant
- Patent Title: Landing areas of bonding structures
- Patent Title (中): 接合结构的着陆区
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Application No.: US13313333Application Date: 2011-12-07
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Publication No.: US09257385B2Publication Date: 2016-02-09
- Inventor: Chih-Horng Chang , Tin-Hao Kuo , Chen-Shien Chen
- Applicant: Chih-Horng Chang , Tin-Hao Kuo , Chen-Shien Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L23/40 ; H01L23/498 ; H01L23/00

Abstract:
A device includes a first and a second package component. A metal trace is disposed on a surface of the first package component. The metal trace has a lengthwise direction. The metal trace includes a portion having an edge, wherein the edge is not parallel to the lengthwise direction of the metal trace. The second package component includes a metal pillar, wherein the second package component is disposed over the first package component. A solder region bonds the metal pillar to the metal trace, wherein the solder region contacts a top surface and the edge of the portion of the metal trace.
Public/Granted literature
- US20130147030A1 Landing Areas of Bonding Structures Public/Granted day:2013-06-13
Information query
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