Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14306432Application Date: 2014-06-17
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Publication No.: US09257395B2Publication Date: 2016-02-09
- Inventor: Izuho Hatada , Hiizu Ootorii , Shuichi Oka , Shusaku Yanagawa
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2013-133772 20130626
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L23/552
Abstract:
A semiconductor device includes a base substrate on which a substrate electrode is arranged, and a semiconductor element which includes a chip electrode electrically connected via solder to the substrate electrode and in which a light absorbing layer is formed on a lower surface side.
Public/Granted literature
- US20150001718A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-01-01
Information query
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