Invention Grant
US09257398B2 Semiconductor device and method for forming the same 有权
半导体装置及其形成方法

  • Patent Title: Semiconductor device and method for forming the same
  • Patent Title (中): 半导体装置及其形成方法
  • Application No.: US14313963
    Application Date: 2014-06-24
  • Publication No.: US09257398B2
    Publication Date: 2016-02-09
  • Inventor: Jung Sam Kim
  • Applicant: SK HYNIX INC.
  • Applicant Address: KR Icheon
  • Assignee: SK HYNIX INC.
  • Current Assignee: SK HYNIX INC.
  • Current Assignee Address: KR Icheon
  • Priority: KR10-2014-0030355 20140314
  • Main IPC: H01L23/00
  • IPC: H01L23/00 H01L27/088 H01L29/423
Semiconductor device and method for forming the same
Abstract:
A semiconductor device includes a first pad region including a plurality of first storage nodes, a second pad region neighboring the first pad region and including a plurality of second storage nodes, a coupling portion disposed between the first pad region and the second pad region, and a plate electrode disposed over the plurality of first storage nodes of the first pad region and the plurality of second storage nodes of the second pad region, and disposed in the coupling portion to interconnect the first pad region and the second pad region.
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