Invention Grant
- Patent Title: Copper ball bond interface structure and formation
- Patent Title (中): 铜球结合界面结构和形成
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Application No.: US14090086Application Date: 2013-11-26
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Publication No.: US09257403B2Publication Date: 2016-02-09
- Inventor: Tu-Anh N. Tran , John G. Arthur , Yin Kheng Au , Chu-Chung Lee , Chin Teck Siong , Meijiang Song , Jia Lin Yap , Matthew J. Zapico
- Applicant: Freescale Semiconductor, Inc.
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Agency: Terrile, Cannatti, Chambers & Holland, LLP
- Agent Michael Rocco Cannatti
- Main IPC: H01L23/00
- IPC: H01L23/00
Abstract:
An integrated circuit copper wire bond connection is provided having a copper ball (32) bonded directly to an aluminum bond pad (31) formed on a low-k dielectric layer (30) to form a bond interface structure for the copper ball characterized by a first plurality of geometric features to provide thermal cycling reliability, including an aluminum minima feature (Z1, Z2) located at an outer peripheral location (42) under the copper ball to prevent formation and/or propagation of cracks in the aluminum bond pad.
Public/Granted literature
- US20150145148A1 Copper Ball Bond Interface Structure and Formation Public/Granted day:2015-05-28
Information query
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