Invention Grant
- Patent Title: Semiconductor device with buried gates and fabrication method thereof
- Patent Title (中): 具有埋栅的半导体器件及其制造方法
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Application No.: US13325552Application Date: 2011-12-14
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Publication No.: US09257436B2Publication Date: 2016-02-09
- Inventor: Jong-Han Shin
- Applicant: Jong-Han Shin
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0128055 20101215
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L27/108 ; H01L29/423

Abstract:
A semiconductor device includes a substrate having a cell region and a peripheral region, a buried gate formed over the substrate of the cell region, a peripheral gate formed over the substrate of the peripheral region and comprising a conductive layer, an inter-layer dielectric layer that covers the substrate, and a peripheral bit line formed inside the inter-layer dielectric layer and contacting the conductive layer.
Public/Granted literature
- US20120153363A1 SEMICONDUCTOR DEVICE WITH BURIED GATES AND FABRICATION METHOD THEREOF Public/Granted day:2012-06-21
Information query
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