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US09257436B2 Semiconductor device with buried gates and fabrication method thereof 有权
具有埋栅的半导体器件及其制造方法

Semiconductor device with buried gates and fabrication method thereof
Abstract:
A semiconductor device includes a substrate having a cell region and a peripheral region, a buried gate formed over the substrate of the cell region, a peripheral gate formed over the substrate of the peripheral region and comprising a conductive layer, an inter-layer dielectric layer that covers the substrate, and a peripheral bit line formed inside the inter-layer dielectric layer and contacting the conductive layer.
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