Semiconductor structures and methods for making semiconductor structures include a split gate non-volatile memory (NVM) cell in an NVM region. A charge storage layer, a first conductive layer, and a capping layer are formed over the substrate, which are patterned to form a control gate stack in the NVM region of the substrate. A high-k dielectric layer, a metal layer, and a second conductive layer are formed over the substrate. The second conductive layer and the metal layer are patterned to form remaining portions of the second conductive layer and the metal layer over and adjacent to a first side of the control gate stack. The remaining portion of the second conductive layer is removed to form a select gate stack, which includes the remaining portion of the metal layer. A stressor layer is formed over the substrate.