Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14498484Application Date: 2014-09-26
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Publication No.: US09257447B2Publication Date: 2016-02-09
- Inventor: Ki Hong Lee , Seung Ho Pyi , In Su Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0101388 20111005
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L27/115 ; H01L21/02 ; H01L21/311 ; H01L21/3213 ; H01L29/423 ; H01L29/66
Abstract:
A semiconductor device includes word lines and interlayer insulating layers alternately stacked, a channel layer penetrating the word lines and the interlayer insulating layers, a tunnel insulating layer surrounding the channel layer, and first charge trap layers surrounding the tunnel insulating layer, interposed between the word lines and the tunnel insulating layer, respectively, and doped with first impurities.
Public/Granted literature
- US20150050790A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-02-19
Information query
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