Invention Grant
- Patent Title: Thin film transistor array substrate
- Patent Title (中): 薄膜晶体管阵列基板
-
Application No.: US14340890Application Date: 2014-07-25
-
Publication No.: US09257454B2Publication Date: 2016-02-09
- Inventor: Masami Hayashi , Takafumi Hashiguchi
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2013-158906 20130731
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; G02F1/1345 ; H01L29/66
Abstract:
A pixel electrode is connected to a drain electrode of TFT via a first aperture formed on a second interlayer insulating film, a second aperture, which includes a bottom portion of the first aperture and is formed on a common electrode, and a third aperture, which is included in the bottom portion of the first aperture and is formed on a first interlayer insulating film and a third interlayer insulating film. The common electrode is connected to a common wiring via a fourth aperture formed on the second interlayer insulating film, and a fifth aperture that is included in a bottom portion of the fourth aperture and is formed on the first interlayer insulating film, and a contact electrode that is formed in the fourth aperture and the fifth aperture.
Public/Granted literature
- US20150034955A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE Public/Granted day:2015-02-05
Information query
IPC分类:
