Invention Grant
- Patent Title: CMOS image sensor for increasing conversion gain
- Patent Title (中): CMOS图像传感器，用于增加转换增益
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Application No.: US13530334Application Date: 2012-06-22
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Publication No.: US09257462B2Publication Date: 2016-02-09
- Inventor: Young Hwan Park , Jung Chak Ahn , Sang Joo Lee , Jong Eun Park , Young Heub Jang
- Applicant: Young Hwan Park , Jung Chak Ahn , Sang Joo Lee , Jong Eun Park , Young Heub Jang
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0070544 20110715
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
In one embodiment, the image sensor includes a first photodiode configured to convert an optical signal into a photocharge, a sensing node configured to store the photocharge of the first photodiode, and a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line. The circuit is connected to at least a first conductive contact, and the output line is disposed between the sensing node and the first conductive contact.
Public/Granted literature
- US20130015324A1 CMOS IMAGE SENSOR Public/Granted day:2013-01-17
Information query
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