Invention Grant
- Patent Title: Three dimensional semiconductor integrated circuit having gate pick-up line and method of manufacturing the same
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Application No.: US14856125Application Date: 2015-09-16
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Publication No.: US09257487B2Publication Date: 2016-02-09
- Inventor: Isaac Chung , Jin Ha Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0037800 20140331
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/528 ; H01L27/115 ; H01L27/24 ; H01L45/00 ; H01L29/423 ; H01L23/48 ; H01L27/105

Abstract:
A 3D semiconductor integrated circuit having a gate pick-up line and a method of manufacturing the same, wherein the semiconductor integrated circuit includes a plurality of active pillars formed in a gate pick-up region, buffer layers formed on the respective active pillars in the gate pick-up region, gates each surrounding an outer circumference of the corresponding active pillar and the corresponding buffer layer, and a gate pick-up line electrically coupled to the gates.
Public/Granted literature
Information query
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