Invention Grant
- Patent Title: Method of fabricating capacitor structure
- Patent Title (中): 制造电容器结构的方法
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Application No.: US13742359Application Date: 2013-01-16
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Publication No.: US09257496B2Publication Date: 2016-02-09
- Inventor: Pao-Chu Chang
- Applicant: UNITED MICROELECTRONICS CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORPORATION
- Current Assignee: UNITED MICROELECTRONICS CORPORATION
- Current Assignee Address: TW Hsinchu
- Agent Ding Yu Tan
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/311 ; H01L23/522

Abstract:
A method of fabricating a capacitor structure includes the following steps. Firstly, a substrate is provided. A first conductive layer, a first insulation layer, a second conductive layer and a second insulation layer are sequentially formed over the substrate. A hard mask material layer is formed on the second insulation layer. Then, the hard mask material layer is defined with a photo resist pattern, so that a hard mask is formed. After the photo resist pattern is removed, the second conductive layer is defined with the hard mask, so that a first electrode of the capacitor structure is formed.
Public/Granted literature
- US20140199819A1 METHOD OF FABRICATING CAPACITOR STRUCTURE Public/Granted day:2014-07-17
Information query
IPC分类: