Invention Grant
US09257496B2 Method of fabricating capacitor structure 有权
制造电容器结构的方法

Method of fabricating capacitor structure
Abstract:
A method of fabricating a capacitor structure includes the following steps. Firstly, a substrate is provided. A first conductive layer, a first insulation layer, a second conductive layer and a second insulation layer are sequentially formed over the substrate. A hard mask material layer is formed on the second insulation layer. Then, the hard mask material layer is defined with a photo resist pattern, so that a hard mask is formed. After the photo resist pattern is removed, the second conductive layer is defined with the hard mask, so that a first electrode of the capacitor structure is formed.
Public/Granted literature
Information query
Patent Agency Ranking
0/0