Invention Grant
- Patent Title: Semiconductor component and method
- Patent Title (中): 半导体元件及方法
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Application No.: US14452162Application Date: 2014-08-05
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Publication No.: US09257513B1Publication Date: 2016-02-09
- Inventor: Chun-Li Liu
- Applicant: Semiconductor Components Industries, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Rennie William Dover
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/40 ; H01L21/02 ; H01L21/74
Abstract:
In accordance with an embodiment, a method for manufacturing a semiconductor component includes providing a semiconductor material having a surface and forming a passivation layer on the semiconductor material Portions of the passivation layer are removed and portions of the semiconductor material exposed by removing the portions of the passivation layer are also removed. A layer of dielectric material is formed on the passivation layer and the exposed portions of the semiconductor material and first and second cavities are formed in the layer of dielectric material. The first cavity exposes a first portion of the semiconductor material and has at least one step shaped sidewall and the second cavity exposes a second portion of the semiconductor material. A first electrode is formed in the first cavity and a second electrode is formed in the second cavity.
Public/Granted literature
- US20160043185A1 SEMICONDUCTOR COMPONENT AND METHOD Public/Granted day:2016-02-11
Information query
IPC分类:
