Invention Grant
- Patent Title: Semiconductor device with plural electrodes formed on substrate
- Patent Title (中): 具有形成在基板上的多个电极的半导体装置
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Application No.: US14219375Application Date: 2014-03-19
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Publication No.: US09257514B2Publication Date: 2016-02-09
- Inventor: Shirou Ozaki , Naoya Okamoto , Kozo Makiyama , Toshihiro Ohki
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2013-086099 20130416
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/40 ; H01L21/768 ; H01L29/778 ; H01L29/205 ; H01L23/31 ; H01L23/532 ; H01L23/522 ; H01L29/78 ; H01L29/20
Abstract:
A semiconductor device includes: a first electrode; a second electrode; an interlayer insulating film made of a porous insulating material and formed above the first electrode and the second electrode; and connection parts electrically connected to the first electrode and the second electrode respectively, wherein a cavity is formed between the interlayer insulating film and a surface of the first electrode, a surface of the second electrode, and parts of surfaces of the connection parts.
Public/Granted literature
- US20140306231A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-10-16
Information query
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