Invention Grant
US09257553B2 Vertical transistor and method to form vertical transistor contact node
有权
垂直晶体管和方法形成垂直晶体管接触节点
- Patent Title: Vertical transistor and method to form vertical transistor contact node
- Patent Title (中): 垂直晶体管和方法形成垂直晶体管接触节点
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Application No.: US14504385Application Date: 2014-10-01
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Publication No.: US09257553B2Publication Date: 2016-02-09
- Inventor: Tzung-Han Lee
- Applicant: INOTERA MEMORIES, INC.
- Applicant Address: TW Hwa-Ya Technology Park Kueishan, Taoyuan
- Assignee: INOTERA MEMORIES, INC.
- Current Assignee: INOTERA MEMORIES, INC.
- Current Assignee Address: TW Hwa-Ya Technology Park Kueishan, Taoyuan
- Agent Winston Hsu; Scott Margo
- Priority: TW103118454A 20140527
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
A vertical transistor structure includes a substrate with a protruding structure, an offset layer covering a top surface of the protruding structure, a conductive layer disposed on the offset layer, and an interlayer disposed between the offset layer and the conductive layer to serve as a contact node.
Public/Granted literature
- US20150349118A1 VERTICAL TRANSISTOR AND METHOD TO FORM VERTICAL TRANSISTOR CONTACT NODE Public/Granted day:2015-12-03
Information query
IPC分类:
