Invention Grant
- Patent Title: Silicon germanium FinFET formation by Ge condensation
- Patent Title (中): 硅锗FinFET通过Ge缩合形成
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Application No.: US14269981Application Date: 2014-05-05
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Publication No.: US09257556B2Publication Date: 2016-02-09
- Inventor: Jeffrey Junhao Xu , Vladimir Machkaoutsan , Kern Rim , Stanley Seungchul Song , Choh Fei Yeap
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/10
Abstract:
A method of forming a semiconductor fin of a FinFET device includes conformally depositing an amorphous or polycrystalline thin film of silicon-germanium (SiGe) on the semiconductor fin. The method also includes oxidizing the amorphous or polycrystalline thin film to diffuse germanium from the amorphous or polycrystalline thin film into the semiconductor fin. Such a method further includes removing an oxidized portion of the amorphous or polycrystalline thin film.
Public/Granted literature
- US20150194525A1 SILICON GERMANIUM FINFET FORMATION BY GE CONDENSATION Public/Granted day:2015-07-09
Information query
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