Invention Grant
- Patent Title: Vertical type memory device
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Application No.: US13844337Application Date: 2013-03-15
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Publication No.: US09257572B2Publication Date: 2016-02-09
- Inventor: Kwang-Soo Seol , Seong-Soon Cho
- Applicant: Kwang-Soo Seol , Seong-Soon Cho
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2012-0110751 20121005
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; H01L29/792 ; H01L27/115 ; H01L29/423 ; H01L29/66 ; H01L29/788

Abstract:
A semiconductor device, comprising: a plurality of memory cell strings; a bitline; and an interconnection coupling at least two of the memory cell strings to the bitline. Memory cell strings can be coupled to corresponding bitlines through corresponding interconnections. Alternate memory cell strings can be coupled to different bitlines through corresponding different interconnections.
Public/Granted literature
- US20140097484A1 VERTICAL TYPE MEMORY DEVICE Public/Granted day:2014-04-10
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